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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ557
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ557 is a switching device which can be driven directly by a 4 V power source. The 2SJ557 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4 +0.1 -0.05 0.16+0.1 -0.06
0.65-0.15
+0.1
2.8 0.2
3
1.5
0 to 0.1
1 2
FEATURES
* Can be driven by a 4 V power source * Low on-state resistance RDS(on)1 = 155 m MAX. (VGS = -10 V, ID = -1.0 A) RDS(on)2 = 255 m MAX. (VGS = -4.5 V, ID = -1.0 A) RDS(on)3 = 290 m MAX. (VGS = -4.0 V, ID = -1.0 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2 1 : Gate 2 : Source 3 : Drain
ORDERING INFORMATION
PART NUMBER 2SJ557 PACKAGE 3-pin Mini Mold (Thin Type)
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-30 -20 / +5 2.5 10 0.2 1.25 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode Marking: XB
Body Diode
Source
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR4 Board, t 5 sec. Remark
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D13292EJ1V0DS00 (1st edition) Date Published June 1999 NS CP(K) Printed in Japan
(c)
1998, 1999
2SJ557
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain Cut-off Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = 16 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -1.5 A VGS = -10 V, ID = -1.0 A VGS = -4.5 V, ID = -1.0 A VGS = -4.0 V, ID = -1.0 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V ID = -1.0 A VGS(on) = -10 V RG = 10 VDD= -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 50 A / s -1.0 1 -1.7 2.5 114 178 212 312 117 56 12 7 133 85 2.8 1.0 1.2 0.84 28 7.8 155 255 290 MIN. TYP. MAX. -10 10 -2.5 UNIT
A A
V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet D13292EJ1V0DS00
2SJ557
TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
dT - Derating Factor - %
ID - Drain Current - A
-10
ID (pulse)
d ite ) im 0 V ) L -1 on S( S = ID (DC) RD VG (@
60
-1
=1 ms 10 ms 10 0m s 5s
PW
40
20
-0.1
Single Pulse Mounted on FR-4 Board of 50mm x 50mm x 1.6mm
0
30 60 90 120 TA - Ambient Temperature - C
150
-0.01 -0.1
-1
-10
-100
VDS - Drain to Source Voltage - V
TRANSFER CHARACTERISTICS
VGS(off) - Gate to Source Cut-off Voltage - V
-10 -1
ID - Drain Current - A
VDS = -10 V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.0 VDS = -10 V ID = -1 mA
-0.1 -0.01 -0.001
TA = 125C 75C 25C
-1.8
-1.6
-25C
-1.4
-0.0001 -0.00001 0
-1
-2
-3
-4
-5
-1.2 -50
0
50
100
150
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT 100
| yfs | - Forward Transfer Admittance - S
Tch - Channel Temperature - C
VDS = -10V
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 500 VGS = -4.0 V
10
TA = -25 C 25 C
400
1
75 C 125 C
300
TA = 125C 75C
0.1
200
25C
-25C
0.01 -0.01
-0.1
-1
-10
100 -0.01
-0.1
-1
-10
ID - Drain Current - A
ID - Drain Current - A
Data Sheet D13292EJ1V0DS00
3
2SJ557
RDS(on) - Drain to Source On-State Resistance - m
500
RDS(on) - Drain to Source On-State Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = -4.5 V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 250 VGS = -10 V
400
200
300
TA = 125C
150
TA = 125C 75C 25C -25C
200
75C 25C -25C
100
100 -0.01
-0.1
-1
-10
50 -0.01
-0.1
-1
-10
ID - Drain Current - A
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
350 ID = -1.0 A 300 250 200 150 100 50 -50 -10 V VGS = -4.0 V -4.5 V
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
500
ID = -1.0 A
400
300
200
100 0
50 100 Tch - Channel Temperature -C
0
150
0
-4
-8
-12
-16
-20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Swwitchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
f = 1 MHz VGS = 0V Ciss
td(off) 100 tf
tr
100
Coss Crss
td(on) 10 VDD = -10V VGS(on) = -10V RG = 10 -1 ID - Drain Current - A -10
10 -1
-10 VDS - Drain to Source Voltage - V
-100
1 -0.1
4
Data Sheet D13292EJ1V0DS00
2SJ557
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10
-10
DYNAMIC INPUT CHARACTERISTICS
IF - Source to Drain Current - A
VGS - Gate to Source Voltage - V
ID = -2.5 A -8 -6
1
VDD = -10 V -6 V
-4 -2
0.1
0.01 0.4
0
0.6
0.8
1.0
1.2
0
1
2
3
4
5
VF(S-D) - Source to Drain Voltage - V
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Single Pulse
Without Board
100
Mounted on 250 mm2 x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board
10
1 0.001
0.01
0.1
1 PW - Pulse Width - S
10
100
1000
Data Sheet D13292EJ1V0DS00
5
2SJ557
[MEMO]
6
Data Sheet D13292EJ1V0DS00
2SJ557
[MEMO]
Data Sheet D13292EJ1V0DS00
7
2SJ557
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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